Thin Film Enhanced Vias
SPECIALTY RF / MICROWAVE / MILLIMETER-WAVE
COMPONENT SOLUTIONS
Home > Products > Thin-Film Technologies > Enhanced Vias®
Properties of Enhanced Vias®
Improved Performance:
- Low resistance connection due to increased metalization thickness through via
- Pure plated Cu and Au, no ceramic filler material
Improved Reliability:
- Connection is independent of adhesion to via's walls
- Through hole can be inspected after mounting to carrier
Structural Integrity:
- Metal overlaps wide area of top conductor, forming a plated rivet.
- Avoids possiblity of closed voids entrapping liquids and gases.
| Design Guidelines for Enhanced Vias® | ||||||||||
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| Parameter | Symbol | Limits/Recommendations | ||||||||
| Hole diameter | D | Minimum: 0.6 X T Nominal: >=1 X T |
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| Rim width | W | Minimum: 0.002" Nominal: 0.005"– 0.025" |
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| Rim thickness | TR | per request | ||||||||
| Nominal DC Resistivity (mΩ) T&D in mils, TR&H in μ") | 318 x T D x (TR+H) |
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