Thin Film Typical Metalizations
SPECIALTY RF / MICROWAVE / MILLIMETER-WAVE
COMPONENT SOLUTIONS
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Typical Metalizations
Typical Metalizations | ||||||||||
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Typical Hybrid Metalizations |
Application | Attachment Method |
Metalization/ Resistor Layers |
Typical Value |
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1. TaN - TiW - Ni* | RF/Microwave circuits: attenuators, loads and DC biasing networks. Hybrids with resistors and spiral inductors. End products: Power supplies, couplers, splitters, filters, amplifiers, SAW devices, laser diode mounts and others. |
Pb/In, Au/Sn, Au/Ge - Eutectic Epoxy Wire Bonding |
TaN 10 to 200 ohms/sq. TiW 300 to 1000 Å NiV 1000 to 2000 Å Au 20 to 300 μin |
50 500 1500 150 |
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2. TiW - Ni* - Au | Same as 1. - without resistors | Pb/In, Au/Sn, Au/Ge - Eutectic Epoxy Wire Bonding |
TiW 300 to 1000 Å NiV 1000 to 2000 Å Au 20 to 300 μin |
500 1500 150 |
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3. TaN - TiW - Au - Ni - Au | Same as 1. - When repeated soldering is required for repairs | Pb/Sn, Au/Sn soldering Epoxy Wire Bonding |
TaN 10 to 200 ohms/sq. TiW 300 to 1000 Å Au 20 to 300 μin Ni 50 to 150 μin Au 20 to 200 μin |
50 500 20 min. 50 min. 150 |
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4. TiW - Cu - Ni* - Au | High Power/Low Loss RF and Power Supply | Pb/Sn, Au/Sn soldering Epoxy Wire Bonding |
TiW 300 to 1000 Å Cu 200 to 2000 μin Ni 50 to 150 μin Au 20 to 200 μin |
500 500 50 min. 150 min. |
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5. TiW - Au - Cu - Ni* - Au | High Power/Low Loss RF and Power Supply | Pb/Sn, Au/Sn soldering Epoxy Wire Bonding |
TiW 300 to 1000 Å Au 3000 to 5000 Å Cu 200 to 2000 μin Ni 50 to 150 μin Au 20 to 200 μin |
500 3000 min. 500 50 min. 150 min. |
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6. TaN - TiW - Au Cu - Ni* - Au | High Power/Low Loss RF and Power Supply with Resistors | Pb/Sn, Au/Sn soldering Epoxy Wire Bonding |
TaN 10 to 200 ohms/sq. TiW 300 to 1000 Å Au 3000 to 5000 Å Cu 200 to 2000 μin Ni 50 to 150 μin Au 20 to 200 μin |
50 500 3000 min. 500 |