Thin Film Typical Substrate

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Typical Substrate Properties, Sputtered and Electroplated Materials, Wafer Construction

Typical Substrate Properties
Properties Nominal	Al₂O₃ 99.6%	Al₂O₃ 96.0%	Fused Silica	BeO 99.5%	AIN	Glass Borosilicate	Glass Ceramic	P-Silicon Boron Doped	N++-Silicon Arsenic Doped	FZ-Silicon Arsenic Doped
Thickness Range (mil)	4-50	10-50	4-25	10-60	10-60	20	20	2-25	4-25	4-25
As Fired (Surface finish)	3μ"	No	No	6μ"	No	10 Â	NA
Lapped (Surface finish) μ"	<20	No	No	<20	<20	NA
Polished (Surface finish) μ"	<2	<4	<1	<3	<3	<.04	<0.6	<.04
Dielectric Constant @ 10 GHz	9.8	9.6	3.8	6.6	8.7	5.1	NA
Loss Tangent @ 10 GHz	0.0002	0.0002	0.0001	0.0003	0.001	0.003	NA
CTE (PPM/°C)	6.7	8.2	0.5	7.5	4.5	3.2	11.5	2.6
Thermal Conductivity (W/mK)	25.5	24.7	1.38	280	170	1.16	2.7	150
Volume Resistivity (ohm-cm)	10¹⁴	10¹⁴	10¹⁴	10¹⁴	10¹³	10¹³	10¹³	15	0.002	10¹⁴
Dielectric Strength (KV/mm)	8.7	8.3	100	14	>10	NA

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Sputtered and Electroplated Materials
Materials	Sputtered	Comment
Al	150-40000 Â	AlSi (<1%) and AICu (2%) available, Typical 2000 - 15000
Au	1000-65000 Â	Typical 3000 - 10000
Cr	150-5000 Â	Typical 600
Cu	2000-65000 Â	N/A
LSCO	300-1200 Â	Typical 600
Ni(V)	500-10000 Â	N/A
Pt	1000-4000 Â	Typical 2500
TaN	300-1500 Â	Barrier Layer
Ti	500-5000 Â	Typical 600
TiW	300-1500 Â	Typical 500
Plated Material	Electrolytic μgm and (μgin)	Electroless μgm and (μgin)
Au	0.5 - 50 (20-2000)	1-10 (40-400)
Cu	5 - 150 (200-6000)	2 - 4 (80-160)
Ni	1.25 - 5 (50-200)	N/A

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Wafer Construction Overview

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